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1

Lattice instabilities in metallic elements

Grimvall, Göran, Magyari-Köpe, Blanka, Ozoliņš, Vidvuds, Persson, Kristin A.

Journal:

Review of Modern Physics

Year:

2012

Language:

english

File:

PDF, 2.46 MB

english, 2012

2

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Ab initio modeling of resistive switching mechanism in binary metal oxides

Magyari-Kope, Blanka, Zhao, Liang, Nishi, Yoshio, Kamiya, Katsumasa, Yang, Moon Young, Shiraishi, Kenji

Year:

2014

Language:

english

File:

PDF, 1.33 MB

english, 2014

3

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

Xiao Zhang,, Jing Li,, Grubbs, Melody, Deal, Michael, Magyari-Kope, Blanka, Clemens, Bruce M., Nishi, Yoshio

Year:

2009

Language:

english

File:

PDF, 356 KB

english, 2009

4

The effects of uniaxial and biaxial strain on the electronic structure of germanium

Sakata, Kaoruho, Magyari-Köpe, Blanka, Gupta, Suyog, Nishi, Yoshio, Blom, Anders, Deák, Peter

Journal:

Computational Materials Science

Year:

2016

Language:

english

File:

PDF, 1.73 MB

english, 2016

5

Electronic correlation effects in reduced rutile TiO_{2} within the LDA+U method

Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 945 KB

english, 2010

6

Model of metallic filament formation and rupture in NiO for unipolar switching

Lee, Hyung Dong, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 659 KB

english, 2010

7

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

Magyari-Köpe, Blanka, Park, Seong Geon, Lee, Hyung-Dong, Nishi, Yoshio

Journal:

Journal of Materials Science

Year:

2012

Language:

english

File:

PDF, 2.36 MB

english, 2012

8

High-pressure structure of ScAlO 3 perovskite

Magyari-Köpe, Blanka

Journal:

Journal of Geophysical Research

Year:

2002

Language:

english

File:

PDF, 231 KB

english, 2002

9

Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

Zhang, Xiao, Mitard, Jerome, Ragnarsson, Lars-Ake, Hoffmann, Tomas, Deal, Michael, Grubbs, Melody E., Li, Jing, Magyari-Kope, Blanka, Clemens, Bruce M., Nishi, Yoshio

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 305 KB

english, 2012

10

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Kamiya, Katsumasa, Yang, Moon Young, Nagata, Takahiro, Park, Seong-Geon, Magyari-Köpe, Blanka, Chikyow, Toyohiro, Yamada, Keisaku, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 2.52 MB

english, 2013

11

Ab-Initio Modeling of the Resistance Switching Mechanism in RRAM Devices: Case Study of Hafnium Oxide (HfO2)

Duncan, Dan, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

MRS Proceedings

Year:

2012

Language:

english

File:

PDF, 438 KB

english, 2012

12

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

Cha, Euijun, Woo, Jiyong, Lee, Daeseok, Lee, Sangheon, Song, Jeonghwan, Koo, Yunmo, Lee, Jihyun, Park, Chan Gyung, Yang, Moon Young, Kamiya, Katsumasa, Shiraishi, Kenji, Magyari-Kope, Blanka, Nishi, Y

Year:

2013

Language:

english

File:

PDF, 1.87 MB

english, 2013

13

Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

Geng, Li, Magyari-Kope, Blanka, Zhang, Zhiyong, Nishi, Yoshio

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 437 KB

english, 2008

14

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

Kan-Hao Xue,, Traore, Boubacar, Blaise, Philippe, Fonseca, Leonardo R. C., Vianello, Elisa, Molas, Gabriel, De Salvo, Barbara, Ghibaudo, Gerard, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.08 MB

english, 2014

15

First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices

Zhao, Liang, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

Mathematical and Computer Modelling

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013

16

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO 2 , NiO and Pr 0.7 Ca 0.3 MnO 3

Magyari-Köpe, Blanka, Tendulkar, Mihir, Park, Seong-Geon, Lee, Hyung Dong, Nishi, Yoshio

Journal:

Year:

2011

Language:

english

File:

PDF, 1.72 MB

english, 2011

17

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field Effect Transistor

Leem, Larkhoon, Srivastava, Ashutosh, Shuang Li,, Magyari-Kope, Blanka, Iannaccone, Giuseppe, Harris, James S., Fiori, Gianluca

Year:

2010

Language:

english

File:

PDF, 2.54 MB

english, 2010

18

Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching

Kamiya, Katsumasa, Yang, Moon Young, Magyari-Kope, Blanka, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.82 MB

english, 2013

19

[IEEE 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Pacific Grove, CA, USA (2008.11.11-2008.11.14)] 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS) - First-principles study of resistance switching in rutile TiO2 with oxygen vacancy

Park, Seong-Geon, Magyari-Kope, Blanka, Nishi, Yoshio

Year:

2008

Language:

english

File:

PDF, 506 KB

english, 2008

20

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - GeSn technology: Extending the Ge electronics roadmap

Gupta, Suyog, Chen, Robert, Magyari-Kope, Blanka, Lin, Hai, Bin Yang,, Nainani, Aneesh, Nishi, Yoshio, Harris, James S., Saraswat, Krishna C.

Year:

2011

Language:

english

File:

PDF, 581 KB

english, 2011

21

Electronic structure and stability of low symmetry Ta 2 O 5 polymorphs

Kim, Ja-Yong, Magyari-Köpe, Blanka, Lee, Kee-Jeung, Kim, Hyeong-Soo, Lee, Seok-Hee, Nishi, Yoshio

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2014

Language:

english

File:

PDF, 586 KB

english, 2014

22

Role of nitrogen incorporation into Al 2 O 3 -based resistive random-access memory

Yang, Moon Young, Kamiya, Katsumasa, Shirakawa, Hiroki, Magyari-Köpe, Blanka, Nishi, Yoshio, Shiraishi, Kenji

Journal:

Applied Physics Express

Year:

2014

Language:

english

File:

PDF, 426 KB

english, 2014

23

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

Park, Seong-Geon, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 522 KB

english, 2011

24

Self-Diffusion Rates in Al from Combined First-Principles and Model-Potential Calculations

Sandberg, Nils, Magyari-Köpe, Blanka, Mattsson, Thomas R.

Journal:

Physical Review Letters

Year:

2002

Language:

english

File:

PDF, 87 KB

english, 2002

25

Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al 2 O 3 Insertion Layer

Yang, Moon Young, Kamiya, Katsumasa, Magyari-Köpe, Blanka, Momida, Hiroyoshi, Ohno, Takahisa, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 915 KB

english, 2013

26

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration

Zhao, Liang, Zizhen Jiang,, Chen, Hong-Yu, Sohn, Joon, Okabe, Kye, Magyari-Kope, Blanka, Philip Wong, H.-S., Nishi, Yoshio

Year:

2014

Language:

english

File:

PDF, 1.82 MB

english, 2014

27

First-principles investigation of the conductive filament configuration in rutile TiO2-x ReRAM

Zhao, Liang, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

MRS Proceedings

Year:

2012

Language:

english

File:

PDF, 391 KB

english, 2012

28

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi 2 /Si Interface

Li, Geng, Blanka, Magyari-Kope, Zhi-Yong, Zhang, Yoshio, Nishi

Journal:

Chinese Physics Letters

Year:

2009

Language:

english

File:

PDF, 118 KB

english, 2009

29

Kinetics of Frenkel Defect Formation in TiO2 from First Principles

Barabash, Sergey V., Chen, Charlene, Pramanik, Dipu, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

MRS Proceedings

Year:

2013

Language:

english

File:

PDF, 4.66 MB

english, 2013

30

Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations

Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 1.11 MB

english, 2009

31

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Zhao, Liang, Clima, Sergiu, Magyari-Köpe, Blanka, Jurczak, Malgorzata, Nishi, Yoshio

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.66 MB

english, 2015

32

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

Duncan, Dan, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 3.81 MB

english, 2016

33

First Principles Simulations of Phase Stability in Stoichiometric and Doped LiMnO2

Landa, Alexander I., Chang, Chun-Chieh, Kumta, Prashant N., Magyari-Köpe, Blanka, Vitos, Levente, Ahuja, Rajeev, Abrikosov, Igor A.

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 45 KB

english, 2001

34

[IEEE 2014 IEEE International Nanoelectronics Conference (INEC) - Sapporo, Japan (2014.7.28-2014.7.31)] 2014 IEEE International Nanoelectronics Conference (INEC) - Review on simulation of filamentary switching in binary metal oxide based RRAM devices

Magyari-Kope, Blanka, Zhao, Liang, Kamiya, Katsumasa, Moon Young Yang,, Shiraishi, Kenji, Nishi, Yoshio

Year:

2014

Language:

english

File:

PDF, 1.09 MB

english, 2014

35

First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5

Kim, Ja-Yong, Magyari-Köpe, Blanka, Nishi, Yoshio, Ahn, Ji-Hoon

Journal:

Current Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.73 MB

english, 2016

36

[IEEE 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2016.4.25-2016.4.27)] 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Doping technology for RRAM — Opportunities and challenges

Magyari-Kope, Blanka, Duncan, Dan, Zhao, Liang, Nishi, Yoshio

Year:

2016

Language:

english

File:

PDF, 706 KB

english, 2016

37

revealed by screened-exchange hybrid density functional theory

Yee, Ye Sheng, Magyari-Köpe, Blanka, Nishi, Yoshio, Bent, Stacey F., Clemens, Bruce M.

Journal:

Physical Review B

Year:

2015

Language:

english

File:

PDF, 1.20 MB

english, 2015

38

Polaronic interactions between oxygen vacancies in rutile

Zhao, Liang, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

Physical Review B

Year:

2017

Language:

english

File:

PDF, 2.96 MB

english, 2017

39

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Atomically-thin HfSe2 transistors with native metal oxides

Mleczko, Michal J., Zhang, Chaofan, Lee, Hye Ryoung, Kuo, Hsueh-Hui, Magyari-Kope, Blanka, Shen, Zhi-Xun, Moore, Robert G., Fisher, Ian R., Nishi, Yoshio, Pop, Eric

Year:

2016

File:

PDF, 546 KB

2016

40

for Improving the Performance of Nonvolatile Memory

Duncan, Dan, Magyari-Köpe, Blanka, Nishi, Yoshio

Journal:

Physical Review Applied

Year:

2017

Language:

english

File:

PDF, 3.20 MB

english, 2017

41

Ferroelectric Switching Pathways and Energetics in (Hf,Zr)O 2

Barabash, Sergey V., Pramanik, Dipankar, Zhai, Yahong, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 739 KB

english, 2017

42

Doping Trends in HfO x RRAM

Duncan, Dan, Jung, Keumdong, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 2.63 MB

english, 2017

43

Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation

Jung, Keumdong, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.68 MB

english, 2017

44

[IEEE 2017 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2017.5.14-2017.5.17)] 2017 IEEE International Memory Workshop (IMW) - Identifying Ferroelectric Switching Pathways in HfO2: First Principles Calculations under Electric Fields

Maeda, Takashi, Magyari-Kope, Blanka, Nishi, Yoshio

Year:

2017

Language:

english

File:

PDF, 1.11 MB

english, 2017

45

Modeling resistive switching materials and devices across scales

Ambrogio, Stefano, Magyari-Köpe, Blanka, Onofrio, Nicolas, Mahbubul Islam, Md, Duncan, Dan, Nishi, Yoshio, Strachan, Alejandro

Journal:

Journal of Electroceramics

Year:

2017

Language:

english

File:

PDF, 3.74 MB

english, 2017

46

Ab initio density functional theory calculation of La 5 Ti 2 Cu 1− x Ag x S 5 O 7 solid solution semiconductor photocatalysts for water splitting

Sakata, Kaoruho, Hisatomi, Takashi, Goto, Yosuke, Magyari-Köpe, Blanka, Deák, Peter, Yamada, Taro, Domen, Kazunari

Journal:

Journal of Physics D Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.31 MB

english, 2017

47

[IEEE 2017 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2017.5.14-2017.5.17)] 2017 IEEE International Memory Workshop (IMW) - Improving the High Resistance State Retention Degradation of Al-Doped HfOx Based on Ab Initio Simulations

Song, Yali, Magyari-Kope, Blanka, Lin, Yinyin, Nishi, Yoshio

Year:

2017

Language:

english

File:

PDF, 2.64 MB

english, 2017

48

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

Mleczko, Michal J., Zhang, Chaofan, Lee, Hye Ryoung, Kuo, Hsueh-Hui, Magyari-Köpe, Blanka, Moore, Robert G., Shen, Zhi-Xun, Fisher, Ian R., Nishi, Yoshio, Pop, Eric

Journal:

Science Advances

Year:

2017

Language:

english

File:

PDF, 961 KB

english, 2017

49

AC stress and electronic effects on SET switching of HfO 2 RRAM

Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H.-S., Hou, Tuo-Hung

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.03 MB

english, 2017

50

Introduction to the special focus topic issue on computational electronics of emerging memory elements

Magyari-Köpe, Blanka, Stewart, Derek

Journal:

Journal of Computational Electronics

Year:

2017

Language:

english

File:

PDF, 291 KB

english, 2017